THE SMART TRICK OF GERMANIUM THAT NO ONE IS DISCUSSING

The smart Trick of Germanium That No One is Discussing

s is of your substrate materials. The lattice mismatch brings about a substantial buildup of pressure Strength in Ge levels epitaxially developed on Si. This pressure Electrical power is mainly relieved by two mechanisms: (i) era of lattice dislocations within the interface (misfit dislocations) and (ii) elastic deformation of both of those the sub

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